COMPARATIVE STUDY OF THE SYNTHESIS METHODS OF THE BORON-SUBSTITUTED FULLERENES

 

Anton R. El Zanin

Student, Department of the Forensic Examination and Physical Materials Science,

Volgograd State University
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Prosp. Universitetsky, 100, 400062 Volgograd, Russian Federation

 

Sergey V. Boroznin

Doctor of Sciences (Physics and Mathematics), Associate Professor,

Head of the Department of the Forensic Examination and Physical Materials Science,

Volgograd State University
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Prosp. Universitetsky, 100, 400062 Volgograd, Russian Federation

 

Abstract. A review of the methods for the producing of the boron-substituted fullerenes was performed in this paper. Doping of carbon nanostructures with boron allows controlling their geometrical, electron-conducting, and optical properties. It is known that boron is an acceptor impurity with respect to group IVA semiconductors (C, Si, Ge). Various carbon materials with boron impurities are of great interest to researchers today. Boron-substituted fullerenes are also not an exception in this respect – to date there is a large body of research devoted to this topic, carried out with the involvement of both theoretical and experimental methods. For this purposes laser evaporation method, arc-discharge method, and chemical vapor deposition method are used. The schemes of the boron-substituted fullerene setups, the equipment, and the materials are shown; the main operations of the synthesis are described for each method. Ways for extracting the target product from fullerene-containing soot and the reagents required for this are described. Different methods for the producing of the boron substituted fullerenes have been compared according to a number of criteria, including product yield, method cost and special equipment requirements. The conclusion highlights the advantages and disadvantages of each method, as well as their applicability for research and industrial purposes.

 

Key words: boron-substituted fullerenes, synthesis methods, laser evaporation, arc discharge method, chemical vapor deposition.

 

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